NXPSC08650Q
DIODE SIL CARB 650V 8A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
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The WeEn Semiconductors NXPSC08650Q is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component features a 650V reverse voltage rating and a continuous forward current capability of 8A. Its forward voltage drop is a maximum of 1.7V at 8A, contributing to improved power efficiency. The device exhibits a reverse leakage current of 230 µA at 650V and a junction operating temperature up to 175°C. The NXPSC08650Q is packaged in a TO-220AC case, suitable for power supply units, industrial motor drives, and renewable energy systems. Its advanced SiC technology provides superior switching characteristics, including no specified reverse recovery time above 500mA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 260pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 230 µA @ 650 V |
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