NXPSC08650DJ
DIODE SIL CARBIDE 650V 8A DPAKManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC08650DJ is a 650V, 8A Silicon Carbide Schottky diode in a DPAK (TO-252-3) surface mount package. This component features a maximum forward voltage (Vf) of 1.7V at 8A and a reverse leakage current of 230 µA at 650V. The NXPSC08650DJ exhibits zero reverse recovery time, enabling high-speed switching applications. Its typical junction operating temperature is rated up to 175°C (Max). This device is commonly utilized in power factor correction, high-voltage power supplies, and automotive electronics. The provided capacitance at 1V is 260pF.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 260pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 230 µA @ 650 V |
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