NXPSC08650D6J
DIODE SIL CARBIDE 650V 8A DPAKManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC08650D6J is a Silicon Carbide (SiC) Schottky diode, rated for 650V DC reverse voltage and 8A average rectified forward current. This surface mount component, housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, features a low forward voltage of 1.7V at 8A and a low leakage current of 230 µA at 650V. The NXPSC08650D6J exhibits no reverse recovery time above 500mA (Io), indicative of its SiC technology, and has a junction operating temperature up to 175°C (Max). Its capacitance at 1V and 1MHz is 260pF. This diode is commonly utilized in power supply applications, electric vehicle charging, and renewable energy systems. The component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 260pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 230 µA @ 650 V |
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