NXPSC08650BJ
DIODE SIL CARBIDE 650V 8A D2PAKManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors' NXPSC08650BJ is a 650V, 8A Silicon Carbide (SiC) Schottky diode. This surface mount component, housed in a TO-263-3, D2PAK package, offers exceptional performance characteristics for demanding applications. Featuring a forward voltage drop of 1.7V at 8A and a reverse leakage current of 230 µA at 650V, it minimizes power loss and enhances efficiency. The NXPSC08650BJ exhibits zero reverse recovery time, a critical attribute for high-frequency switching in power supply designs, electric vehicle charging, and industrial motor control. Its robust construction allows for operation at junction temperatures up to 175°C (Max). The component is supplied on tape and reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 260pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 230 µA @ 650 V |
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