NXPSC08650B6J
DIODE SIL CARBIDE 650V 8A D2PAKManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC08650B6J is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This surface mount component, packaged in a TO-263-3, D2PAK (2 Leads + Tab) configuration, offers a maximum DC reverse voltage of 650 V and an average rectified current handling capability of 8 A. The forward voltage drop (Vf) is specified at 1.7 V at 8 A. Notably, this SiC diode exhibits zero reverse recovery time (trr) above 500mA (Io), contributing to significantly reduced switching losses. Its low reverse leakage current is rated at 230 µA at 650 V, with a capacitance of 260 pF @ 1V, 1MHz. The operating junction temperature can reach up to 175°C (Max). This component is commonly utilized in power factor correction (PFC) circuits and switch-mode power supplies (SMPS) across various industrial sectors. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 260pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 230 µA @ 650 V |
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