NXPSC086506Q
DIODE SIL CARB 650V 8A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC086506Q is a 650V, 8A Silicon Carbide (SiC) Schottky Diode in a TO-220AC package. This through-hole component offers a maximum forward voltage (Vf) of 1.7V at 8A and a reverse leakage of 230 µA at 650 V. It features a low junction capacitance of 260pF at 1V, 1MHz and a high maximum operating junction temperature of 175°C. The device exhibits no significant reverse recovery time (>500mA Io), characteristic of SiC Schottky technology. This diode is suitable for applications in power factor correction, switch mode power supplies, and solar inverters where high efficiency and performance are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 260pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 230 µA @ 650 V |
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