NXPSC06650X6Q
DIODE SIL CARBIDE 650V 6A TO220FManufacturer: WeEn Semiconductors
Categories: Single Diodes
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The WeEn Semiconductors NXPSC06650X6Q is a 650V Silicon Carbide (SiC) Schottky diode designed for high-performance applications. Featuring a low forward voltage drop of 1.7V at 6A and an average rectified current capability of 6A, this diode offers excellent efficiency. Its zero reverse recovery time (trr) and negligible reverse leakage current of 200 µA at 650V contribute to reduced switching losses. The TO-220F package with an isolated tab ensures robust thermal management, with a maximum junction operating temperature of 175°C. This component is suitable for demanding power conversion systems across industries such as industrial power supplies, electric vehicle charging, and renewable energy. The device exhibits a capacitance of 190pF at 1V and 1MHz.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 190pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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