NXPSC06650Q
DIODE SIL CARB 650V 6A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC06650Q is a 650V, 6A Silicon Carbide (SiC) Schottky diode. This through-hole component, packaged in a TO-220AC, offers a low forward voltage of 1.7V at 6A and a reverse leakage of 200 µA at 650V. The device boasts zero reverse recovery time, ensuring efficient switching performance for currents greater than 500mA. With a maximum junction operating temperature of 175°C and a capacitance of 190pF at 1V, 1MHz, the NXPSC06650Q is suited for power conversion applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 190pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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