NXPSC06650D6J
DIODE SIL CARBIDE 650V 6A DPAKManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC06650D6J is a 650V Silicon Carbide Schottky diode in a DPAK package. This surface mount component offers a forward voltage of 1.7V at 6A and an average rectified current capability of 6A. It exhibits a low reverse leakage of 200 µA at its maximum reverse voltage of 650V. The NXPSC06650D6J features zero reverse recovery time above 500mA, characteristic of SiC Schottky technology. With a maximum junction operating temperature of 175°C, this diode is supplied in Tape & Reel packaging. Its performance attributes make it suitable for applications in power factor correction, switch mode power supplies, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 190pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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