NXPSC06650B6J
DIODE SIL CARBIDE 650V 6A D2PAKManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC06650B6J is a 650V, 6A Silicon Carbide (SiC) Schottky diode designed for demanding power applications. This surface mount device, packaged in a TO-263-3 (D2PAK) configuration, offers a low forward voltage drop of 1.7V at 6A and exhibits zero reverse recovery time, enabling higher switching frequencies and improved system efficiency. With a maximum operating junction temperature of 175°C and a reverse leakage current of 200 µA at 650V, the NXPSC06650B6J is suitable for use in power factor correction, electric vehicle charging, solar inverters, and industrial power supplies. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 190pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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