NXPSC066506Q
DIODE SIL CARB 650V 6A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC066506Q is a 650V, 6A Silicon Carbide (SiC) Schottky diode. This through-hole component, packaged in a TO-220AC, offers a forward voltage drop of 1.7V at 6A. The device exhibits a low reverse leakage current of 200 µA at 650V and features an exceptionally fast switching characteristic with zero reverse recovery time for currents above 500mA. Its junction operating temperature can reach a maximum of 175°C. Applications for this component are found in high-efficiency power conversion systems, including switched-mode power supplies, solar inverters, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 190pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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