NXPSC04650X6Q
DIODE SIL CARBIDE 650V 4A TO220FManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC04650X6Q is a 650V Silicon Carbide (SiC) Schottky diode. This through-hole component features a maximum forward voltage (Vf) of 1.7V at 4A and an average rectified forward current (Io) of 4A. The device exhibits a reverse leakage current of 170 µA at its maximum reverse voltage of 650V. Notably, it offers zero reverse recovery time, exceeding 500mA. The junction operating temperature can reach up to 175°C (Max). Packaged in a TO-220F (TO-220-2 Full Pack, Isolated Tab) configuration, this diode is suitable for applications in power factor correction, switch mode power supplies, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 170 µA @ 650 V |
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