NXPSC04650Q
DIODE SIL CARB 650V 4A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
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The WeEn Semiconductors NXPSC04650Q is a Silicon Carbide Schottky diode with a maximum reverse voltage of 650V and an average rectified current capability of 4A. This through-hole component is housed in a TO-220AC package. It features a low forward voltage drop of 1.7V at 4A and a minimal reverse leakage current of 170 µA at its rated reverse voltage. The device exhibits no significant reverse recovery time (trr) above 500mA, indicating high-speed switching performance. With a maximum junction operating temperature of 175°C, the NXPSC04650Q is suitable for demanding applications in power supplies, solar inverters, and electric vehicle charging infrastructure. Its capacitance at 1V and 1MHz is 130pF.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 170 µA @ 650 V |
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