NXPSC04650DJ
DIODE SIL CARBIDE 650V 4A DPAKManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors' NXPSC04650DJ is a 650V, 4A Silicon Carbide Schottky diode in a DPAK package. This surface mount component features a low forward voltage of 1.7V at 4A and a minimal reverse leakage current of 170 µA at 650 V. The device exhibits zero reverse recovery time for currents greater than 500mA. With a maximum junction operating temperature of 175°C and a capacitance of 130pF at 1V/1MHz, the NXPSC04650DJ is suitable for applications in power factor correction, switch mode power supplies, and solar inverters. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 170 µA @ 650 V |
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