NXPSC04650D6J
DIODE SIL CARBIDE 650V 4A DPAKManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC04650D6J is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This component features a 650 V reverse voltage rating and a 4 A average rectified current capability. Its forward voltage drop is a maximum of 1.7 V at 4 A, and it exhibits a very low reverse leakage current of 170 µA at its maximum reverse voltage. The NXPSC04650D6J boasts a 0 ns reverse recovery time, indicating superior switching performance with no recovery time above 500mA. The junction operating temperature can reach up to 175°C (Max). Packaged in a DPAK (TO-252-3, DPAK (2 Leads + Tab), SC-63) for surface mounting, this device is ideal for power factor correction, switch mode power supplies, and electric vehicle charging infrastructure. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 170 µA @ 650 V |
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