NXPSC04650B6J
DIODE SIL CARBIDE 650V 4A D2PAKManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC04650B6J is a 650V, 4A Silicon Carbide (SiC) Schottky diode in a D2PAK (TO-263-3, D2PAK) surface mount package. This component features a low forward voltage of 1.7V at 4A and a minimal reverse leakage current of 170 µA at 650V. The NXPSC04650B6J exhibits zero reverse recovery time, enabling high-efficiency operation in demanding applications. Its high operating junction temperature of 175°C (Max) and robust construction make it suitable for power factor correction, photovoltaic inverters, and electric vehicle charging infrastructure. The device is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 170 µA @ 650 V |
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