NXPSC046506Q
DIODE SIL CARB 650V 4A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC046506Q is a 650V, 4A Silicon Carbide (SiC) Schottky diode. Designed for high-efficiency power conversion, this component features a maximum forward voltage (Vf) of 1.7V at 4A and a reverse leakage current of 170 µA at its maximum reverse voltage. Its TO-220AC package with through-hole mounting facilitates integration into power supply units, motor control systems, and industrial automation equipment. The diode exhibits a low junction operating temperature of 175°C (Max) and a specified capacitance of 130pF at 1V and 1MHz. The NXPSC046506Q is characterized by its fast switching capability with no discernible reverse recovery time above 500mA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 170 µA @ 650 V |
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