NXPLQSC10650Q
DIODE SIL CARB 650V 10A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors' NXPLQSC10650Q is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component features a 650 V reverse voltage (Vr) and a maximum forward voltage (Vf) of 1.85 V at 10 A. With an average rectified current (Io) of 10 A and a low reverse leakage of 230 µA at 650 V, it offers efficient rectification. The NXPLQSC10650Q boasts a high junction operating temperature of 175°C (Max) and a TO-220AC package. Its SiC technology provides superior switching characteristics with zero reverse recovery time (trr) for currents exceeding 500 mA. This diode is suitable for power factor correction, photovoltaic inverters, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 250pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.85 V @ 10 A |
| Current - Reverse Leakage @ Vr | 230 µA @ 650 V |
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