NXPLQSC106506Q
DIODE SCHOTTKY 650V 10A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors' NXPLQSC106506Q is a 650V, 10A Silicon Carbide (SiC) Schottky diode. This through-hole component, with its TO-220AC package, offers a maximum forward voltage (Vf) of 1.85V at 10A. The device exhibits a reverse leakage current of 230 µA at 650V and features a junction operating temperature up to 175°C (Max). Notably, it boasts a reverse recovery time (trr) of 0 ns, indicating no recovery time above 500mA. The typical capacitance at 1V is 250pF. This diode is suitable for applications in power supply units, solar inverters, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 250pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.85 V @ 10 A |
| Current - Reverse Leakage @ Vr | 230 µA @ 650 V |
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