PHE13005X,127
TRANS NPN 400V 4A TO220FManufacturer: WeEn Semiconductors
Categories: Single Bipolar Transistors
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WeEn Semiconductors PHE13005X-127 is a high-voltage NPN bipolar junction transistor (BJT) designed for power switching applications. This device offers a continuous collector current capability of 4A and a maximum collector-emitter breakdown voltage of 400V, making it suitable for applications requiring robust voltage handling. With a maximum power dissipation of 26W and an operating junction temperature up to 150°C, it provides reliable performance in demanding environments. The transistor exhibits a typical DC current gain (hFE) of 10 at 2A collector current and 5V collector-emitter voltage, with a saturation voltage (Vce(sat)) of 1V at 1A base current and 4A collector current. The TO-220F package, featuring an isolated tab, facilitates efficient heat dissipation and streamlined mounting in through-hole configurations. This component finds utility in power supply units, lighting control, and motor drive circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 4A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 2A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220F |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 26 W |
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