WNSC2D401200CWQ
DIODE ARR SIC 1200V 40A TO247-3Manufacturer: WeEn Semiconductors
Categories: Diode Arrays
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WeEn Semiconductors WNSC2D401200CWQ is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component, housed in a TO-247-3 package, offers a maximum DC reverse voltage of 1200 V and an average rectified current of 40 A per diode. It exhibits a low forward voltage drop of 1.8 V at 20 A and a reverse leakage current of 200 µA at 1200 V. The WNSC2D401200CWQ is designed for demanding applications requiring high efficiency and reliability, including power supplies, electric vehicle charging, solar inverters, and industrial motor drives. Its SiC technology provides superior performance characteristics, such as reduced switching losses and higher operating temperatures, up to 175°C junction temperature. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 40A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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