WNSC16650CWQ
DIODE ARR SIC 650V 16A TO247-3Manufacturer: WeEn Semiconductors
Categories: Diode Arrays
Quality Control: Learn More
WeEn Semiconductors WNSC16650CWQ is a Silicon Carbide (SiC) Schottky diode array. This component features a single pair of common cathode diodes, delivering a maximum DC reverse voltage (Vr) of 650 V. Each diode is rated for an average rectified current (Io) of 16 A, with a forward voltage (Vf) of 1.7 V at 8 A. The reverse leakage current is specified at 50 µA at 650 V. Notably, this SiC Schottky diode exhibits no reverse recovery time above 500 mA (Io). The device is housed in a TO-247-3 package, suitable for through-hole mounting, and operates at junction temperatures up to 175°C. This diode array finds application in power factor correction, electric vehicle charging, and solar inverters.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 16A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
Request a Quote
Clients Also Buy
WNSC2D20650CJQ
DIODE ARR SIC SCHOT 650V TO3PF
BYV415K-600PQ
DIODE ARRAY GP 600V 15A TO3P
BYV72EW-200,127
DIODE ARRAY GP 200V 15A TO247-3
