NXPSC20650WQ
DIODE ARR SIC 650V 20A TO247-3Manufacturer: WeEn Semiconductors
Categories: Diode Arrays
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WeEn Semiconductors NXPSC20650WQ is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component, housed in a TO-247-3 package, offers a maximum DC reverse voltage of 650 V and a per-diode average rectified current of 20 A. The forward voltage drop is 1.7 V at 10 A, with a reverse leakage current of 250 µA at 650 V. The device exhibits no recovery time for currents greater than 500 mA, indicating excellent high-frequency switching performance. Its maximum junction operating temperature is 175°C. This diode array is suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies where high efficiency and ruggedness are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 20A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 250 µA @ 650 V |
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