NXPSC20650W-AQ
DIODE ARR SIC 650V 20A TO247-3Manufacturer: WeEn Semiconductors
Categories: Diode Arrays
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WeEn Semiconductors NXPSC20650W-AQ is a Silicon Carbide (SiC) Schottky Diode Array. This component features a common cathode configuration with two diodes, each rated for a maximum reverse voltage of 650 V and an average rectified current of 20 A per diode. The forward voltage drop (Vf) is a maximum of 1.7 V at 10 A. Exhibiting zero reverse recovery time (trr) and no discernible recovery time above 500 mA, this device is optimized for high-frequency switching applications. The reverse leakage current is rated at 60 µA at 650 V. Packaged in a TO-247-3 through-hole configuration, it is designed for operation up to a junction temperature of 175°C. This diode array is suitable for power supply, motor drive, and industrial automation applications.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 20A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
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