NXPLQSC30650WQ
DIODE ARR SIC 650V 30A TO247-3Manufacturer: WeEn Semiconductors
Categories: Diode Arrays
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WeEn Semiconductors NXPLQSC30650WQ is a Silicon Carbide Schottky diode array featuring a common cathode configuration. This through-hole component, housed in a TO-247-3 package, offers a maximum DC reverse voltage of 650 V and an average rectified current of 30 A per diode. The forward voltage drop is rated at 1.95 V at 15 A, with a low reverse leakage of 250 µA at 650 V. The device boasts a maximum junction operating temperature of 175°C and exhibits zero reverse recovery time, signifying a high-efficiency switching characteristic. Applications for this SiC Schottky diode array are found in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 30A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.95 V @ 15 A |
| Current - Reverse Leakage @ Vr | 250 µA @ 650 V |
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