NXPLQSC20650W6Q
DIODE ARR SIC 650V 20A TO247-3Manufacturer: WeEn Semiconductors
Categories: Diode Arrays
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WeEn Semiconductors NXPLQSC20650W6Q is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component, housed in a TO-247-3 package, offers a maximum DC reverse voltage of 650 V and an average rectified current of 20 A per diode. The forward voltage drop is specified at a maximum of 1.85 V at 10 A, with a remarkably low reverse leakage of 230 µA at 650 V. Notably, this SiC Schottky diode exhibits no recovery time for currents exceeding 500 mA, contributing to highly efficient switching performance. Its robust construction and high temperature capability, with a maximum junction operating temperature of 175°C, make it suitable for demanding applications in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 20A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.85 V @ 10 A |
| Current - Reverse Leakage @ Vr | 230 µA @ 650 V |
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