BYV32EB-200PQ
DIODE ARRAY GP 200V 20A D2PAKManufacturer: WeEn Semiconductors
Categories: Diode Arrays
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WeEn Semiconductors BYV32EB-200PQ is a high-performance diode array featuring a common cathode configuration. This component offers a maximum DC reverse voltage of 200V and a significant average rectified current capability of 20A per diode. The forward voltage drop is specified at 1.15V at 20A, with a reverse leakage current of 5 µA at 200V. Designed for efficient switching, it exhibits a fast recovery time of 25 ns. The BYV32EB-200PQ is housed in a TO-263-3, D2PAK surface-mount package, facilitating streamlined assembly in demanding applications. This diode array is well-suited for power supply rectification, output rectification, and general-purpose high-current switching in industrial and automotive sectors. The operating junction temperature can reach up to 150°C (Max).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 20A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 20 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
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