VP1008B
MOSFET P-CH 100V 790MA TO39Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, part number VP1008B, offers a 100V drain-source breakdown voltage. This through-hole component, packaged in a TO-39 metal can (TO-205AD), features a continuous drain current of 790mA at 25°C ambient and a maximum power dissipation of 6.25W. The on-resistance (Rds On) is specified at 5 Ohm maximum for 1A drain current and 10V gate-source voltage. Key parameters include a 4.5V maximum gate threshold voltage at 1mA and an input capacitance of 150pF maximum at 25V. The device operates across a temperature range of -55°C to 150°C. This Vishay Siliconix MOSFET is suitable for applications in industrial and defense sectors requiring robust power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 790mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-39 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
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