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VP1008B

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VP1008B

MOSFET P-CH 100V 790MA TO39

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix P-Channel MOSFET, part number VP1008B, offers a 100V drain-source breakdown voltage. This through-hole component, packaged in a TO-39 metal can (TO-205AD), features a continuous drain current of 790mA at 25°C ambient and a maximum power dissipation of 6.25W. The on-resistance (Rds On) is specified at 5 Ohm maximum for 1A drain current and 10V gate-source voltage. Key parameters include a 4.5V maximum gate threshold voltage at 1mA and an input capacitance of 150pF maximum at 25V. The device operates across a temperature range of -55°C to 150°C. This Vishay Siliconix MOSFET is suitable for applications in industrial and defense sectors requiring robust power switching.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C790mA (Ta)
Rds On (Max) @ Id, Vgs5Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)6.25W (Ta)
Vgs(th) (Max) @ Id4.5V @ 1mA
Supplier Device PackageTO-39
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 25 V

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