VP0808B-E3
MOSFET P-CH 80V 880MA TO39Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, part number VP0808B-E3, offers an 80V drain-to-source voltage capability within a TO-39 package. This device features a continuous drain current of 880mA at 25°C and a maximum power dissipation of 6.25W, also at 25°C. The ON-resistance (Rds On) is specified at a maximum of 5 Ohms when subjected to 1A drain current and 10V gate-source voltage. Key parameters include a maximum input capacitance (Ciss) of 150 pF at 25V and a gate threshold voltage (Vgs(th)) of 4.5V at 1mA. The operating temperature range is -55°C to 150°C. This component is suitable for applications in industrial and automotive sectors requiring robust power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 880mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-39 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
| Qualification | - |
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