VP0808B
MOSFET P-CH 80V 880MA TO39Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, part number VP0808B, offers an 80V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 880mA at 25°C. This through-hole component, housed in a TO-39 (TO-205AD) metal can package, features a maximum power dissipation of 6.25W (Ta). The on-resistance (Rds On) is a maximum of 5 Ohms at 1A and 10V Vgs. Input capacitance (Ciss) is rated at 150pF maximum at 25V. The device operates within an ambient temperature range of -55°C to 150°C. This component is suitable for applications in industrial and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 880mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-39 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V |
| Qualification | - |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SUP90330E-GE3
MOSFET N-CH 200V 35.8A TO220AB
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
