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TP0610KL-TR1-E3

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TP0610KL-TR1-E3

MOSFET P-CH 60V 270MA TO226AA

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TP0610KL-TR1-E3 TrenchFET® P-channel MOSFET. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 270mA at 25°C. The Rds On is a maximum of 6 Ohms at 500mA, 10V. It operates with a gate-source voltage (Vgs) range of ±20V, and a threshold voltage (Vgs(th)) maximum of 3V at 250µA. This through-hole mounted component is supplied in a TO-226AA (TO-92) package and is available on tape and reel. Power dissipation is rated at 800mW at 25°C. Applications include battery management, power switching, and general-purpose analog switching.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C270mA (Ta)
Rds On (Max) @ Id, Vgs6Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-226AA (TO-92)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs3 nC @ 15 V

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