TP0610KL-TR1-E3
MOSFET P-CH 60V 270MA TO226AAManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TP0610KL-TR1-E3 TrenchFET® P-channel MOSFET. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 270mA at 25°C. The Rds On is a maximum of 6 Ohms at 500mA, 10V. It operates with a gate-source voltage (Vgs) range of ±20V, and a threshold voltage (Vgs(th)) maximum of 3V at 250µA. This through-hole mounted component is supplied in a TO-226AA (TO-92) package and is available on tape and reel. Power dissipation is rated at 800mW at 25°C. Applications include battery management, power switching, and general-purpose analog switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 270mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-226AA (TO-92) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 15 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
