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TP0610K-T1

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TP0610K-T1

MOSFET P-CH 60V 185MA SOT23-3

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TP0610K-T1 is a P-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 185mA at 25°C ambient temperature. The device offers a maximum on-resistance (Rds On) of 6 Ohms at 500mA drain current and 10V gate-source voltage. With a total gate charge (Qg) of 1.7 nC at 15V, it facilitates fast switching characteristics. Input capacitance (Ciss) is specified at 23 pF maximum at 25V. The TP0610K-T1 is housed in a compact SOT-23-3 (TO-236) surface-mount package, suitable for space-constrained designs. Its maximum power dissipation is 350mW at 25°C ambient. This MOSFET is utilized across various industries including consumer electronics, industrial automation, and telecommunications.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C185mA (Ta)
Rds On (Max) @ Id, Vgs6Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds23 pF @ 25 V

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