TP0610K-T1
MOSFET P-CH 60V 185MA SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TP0610K-T1 is a P-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 185mA at 25°C ambient temperature. The device offers a maximum on-resistance (Rds On) of 6 Ohms at 500mA drain current and 10V gate-source voltage. With a total gate charge (Qg) of 1.7 nC at 15V, it facilitates fast switching characteristics. Input capacitance (Ciss) is specified at 23 pF maximum at 25V. The TP0610K-T1 is housed in a compact SOT-23-3 (TO-236) surface-mount package, suitable for space-constrained designs. Its maximum power dissipation is 350mW at 25°C ambient. This MOSFET is utilized across various industries including consumer electronics, industrial automation, and telecommunications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 185mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23 pF @ 25 V |
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