TP0202K-T1-GE3
MOSFET P-CH 30V 385MA SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TP0202K-T1-GE3 is a P-Channel TrenchFET® Power MOSFET designed for efficient power management applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 385mA at 25°C. With a maximum power dissipation of 350mW (Ta) and a low on-resistance of 1.4 Ohms at 500mA and 10V, it offers excellent efficiency in a compact SOT-23-3 (TO-236) package. The MOSFET is suitable for operation across a wide temperature range from -55°C to 150°C (TJ). Key electrical characteristics include a Gate Charge (Qg) of 1 nC at 10V and an Input Capacitance (Ciss) of 31 pF at 15V. This device is commonly utilized in consumer electronics, industrial automation, and battery management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 385mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 31 pF @ 15 V |