TP0202K-T1-E3
MOSFET P-CH 30V 385MA SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TP0202K-T1-E3 is a P-Channel TrenchFET® MOSFET designed for efficient power management. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 385mA at 25°C (Ta), with a maximum power dissipation of 350mW (Ta). The Rds On is specified at 1.4 Ohms maximum at 500mA and 10V Vgs. Operating across a temperature range of -55°C to 150°C, it is housed in a standard SOT-23-3 (TO-236) surface-mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 1 nC max at 10V Vgs and an input capacitance (Ciss) of 31 pF max at 15V Vds. This component finds application in areas such as battery management, consumer electronics, and portable devices.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 385mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 31 pF @ 15 V |
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