TP0101K-T1-E3
MOSFET P-CH 20V 0.58A SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TP0101K-T1-E3 is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 580mA at 25°C (Ta). The Rds On is specified at a maximum of 650mOhm when operating at 580mA drain current and 4.5V gate-source voltage. With a Gate Charge (Qg) of 2.2 nC at 4.5V, this MOSFET is suitable for various switching and amplification tasks. It is packaged in a SOT-23-3 (TO-236) case and is supplied on cut tape. This device finds application in consumer electronics, industrial control, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 580mA (Ta) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 580mA, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 50µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 4.5 V |
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