TN0201K-T1-E3
MOSFET N-CH 20V 420MA SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® TN0201K-T1-E3 is an N-channel power MOSFET with a 20V drain-source breakdown voltage (Vdss). This component features a low on-resistance of 1 Ohm maximum at 300mA drain current and 10V gate-source voltage, facilitated by its advanced trench technology. The continuous drain current capability is 420mA at 25°C ambient temperature, with a maximum power dissipation of 350mW under the same conditions. The device is packaged in a compact SOT-23-3 (TO-236) surface-mount case, supplied on tape and reel. It operates across a temperature range of -55°C to 150°C. The TN0201K-T1-E3 is suitable for various applications including power management, battery protection circuits, and general-purpose switching in consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 420mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 10 V |
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