TN0200K-T1-E3
MOSFET N-CH 20V SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TN0200K-T1-E3 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 730mA at 25°C (Ta). The device exhibits a low on-resistance (Rds On) of 400mOhm at 600mA and 4.5V Vgs, ensuring minimal power dissipation. With a gate charge (Qg) of 2nC at 4.5V, it is optimized for fast switching speeds. The TN0200K-T1-E3 is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs in industries such as consumer electronics and industrial control. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 50µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 730mA (Ta) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 600mA, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 50µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 4.5 V |
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