SUP90N15-18P-E3
MOSFET N-CH 150V 90A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP90N15-18P-E3 is an N-Channel TrenchFET® power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 90 A at 25°C (Tc). The Rds(on) is specified at a maximum of 18 mOhm at 20 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 100 nC at 10 V and input capacitance (Ciss) of 4180 pF at 75 V. The device offers robust thermal management with a maximum power dissipation of 3.75 W (Ta) and 375 W (Tc). It is housed in a TO-220AB package for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). The SUP90N15-18P-E3 is suitable for use in industrial power supplies, automotive applications, and renewable energy systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4180 pF @ 75 V |