SUP90N08-7M7P-E3
MOSFET N-CH 75V 90A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP90N08-7M7P-E3 is a TrenchFET® series N-Channel power MOSFET designed for high-efficiency power conversion applications. This component features a 75V drain-source voltage (Vdss) and a continuous drain current capability of 90A at 25°C (Tc). With a maximum on-resistance (Rds(on)) of 7.7mOhm at 20A and 10V gate drive, it offers low conduction losses. The device boasts a gate charge (Qg) of 105 nC at 10V and an input capacitance (Ciss) of 4250 pF at 30V, facilitating faster switching performance. Power dissipation is rated at 3.75W (Ta) and 208.3W (Tc). The SUP90N08-7M7P-E3 is housed in a TO-220AB package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is commonly found in industrial power supplies, automotive electronics, and renewable energy systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 208.3W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4250 pF @ 30 V |