SUP90N06-6M0P-E3
MOSFET N-CH 60V 90A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUP90N06-6M0P-E3 is a TrenchFET® series N-channel power MOSFET designed for high-efficiency power conversion applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 90A at 25°C (Tc). The low on-resistance (Rds On) of 6mOhm is achieved at 20A and 10V Vgs, minimizing conduction losses. With a maximum gate charge (Qg) of 120nC at 10V and input capacitance (Ciss) of 4700pF at 30V, it offers efficient switching characteristics. The device supports a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4.5V at 250µA. Packaged in a TO-220AB through-hole case, it can dissipate up to 272W (Tc) of power. This MOSFET is suitable for use in automotive, industrial power supplies, and server applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 272W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 30 V |
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