SUP90N06-5M0P-E3
MOSFET N-CH 60V 90A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP90N06-5M0P-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C (Tc). The on-resistance (Rds(on)) is specified at a maximum of 5mOhm at 20A and 10V Vgs. Key parameters include a gate charge (Qg) of 160 nC (max) at 10V Vgs and an input capacitance (Ciss) of 6190 pF (max) at 30V Vds. Power dissipation is rated at 300W (Tc) and 3.75W (Ta). The MOSFET is housed in a TO-220AB through-hole package. This component is frequently utilized in power supply designs, automotive electronics, and industrial motor control applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: StripDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Strip |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6190 pF @ 30 V |