SUP90N04-3M3P-GE3
MOSFET N-CH 40V 90A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUP90N04-3M3P-GE3 TrenchFET® N-Channel Power MOSFET. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C (Tc). The Vgs(th) is a maximum of 2.5V at 250µA, with a gate drive range of 4.5V to 10V for optimal Rds(on). The device exhibits a low on-resistance of 3.3mOhm at 22A and 10V Vgs. Key parameters include a gate charge of 131 nC (max) at 10V Vgs and an input capacitance (Ciss) of 5286 pF (max) at 20V Vds. With a maximum power dissipation of 125W (Tc), this TO-220AB packaged MOSFET is suitable for general-purpose power switching applications across various industrial sectors. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 131 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5286 pF @ 20 V |
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