SUP90N03-03-E3
MOSFET N-CH 30V 90A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SUP90N03-03-E3 is a TrenchFET® series N-Channel MOSFET designed for high-performance applications. This component features a 30V drain-to-source voltage capability and a continuous drain current rating of 90A at 25°C (Tc). With a maximum on-resistance (Rds On) of 2.9mOhm at 28.8A and 10V Vgs, it exhibits low conduction losses. The gate charge (Qg) is 257 nC maximum at 10V, and input capacitance (Ciss) is 12065 pF maximum at 15V. It offers a maximum power dissipation of 250W (Tc) and 3.75W (Ta). The device operates across a temperature range of -55°C to 175°C. Packaged in a TO-220AB through-hole configuration, this MOSFET is suitable for power management and switching applications in industries such as automotive and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 28.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 250W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 257 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12065 pF @ 15 V |