SUP90330E-GE3
MOSFET N-CH 200V 35.8A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP90330E-GE3 is an N-Channel ThunderFET® Power MOSFET designed for high-efficiency power conversion applications. This device features a 200 V drain-source voltage (Vdss) and a continuous drain current (Id) of 35.8 A at 25°C. With a low on-resistance of 37.5 mOhm maximum at 12.2 A and 10 V gate-source voltage, it ensures minimal conduction losses. The device offers a maximum power dissipation of 125 W (Tc) and a junction temperature range of -55°C to 175°C. Key parameters include a gate charge of 32 nC maximum at 10 V and an input capacitance (Ciss) of 1172 pF maximum at 100 V. The SUP90330E-GE3 is housed in a standard TO-220AB package for through-hole mounting and finds application in power supplies, motor control, and industrial automation.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 37.5mOhm @ 12.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1172 pF @ 100 V |
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