SUP90100E-GE3
N-CHANNEL 200 V (D-S) MOSFET TO-Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP90100E-GE3 is an N-Channel TrenchFET® Power MOSFET designed for high-power applications. This component features a maximum drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 150 A at 25°C, with a maximum power dissipation of 375 W (Tc). The Rds(On) is specified at a maximum of 10.9 mOhm at 16 A and 10 V gate-source voltage. Key parameters include input capacitance (Ciss) of 3930 pF at 100 V and gate charge (Qg) of 110 nC at 10 V. The device operates over a temperature range of -55°C to 175°C (TJ) and is housed in a standard TO-220AB package, suitable for through-hole mounting. This MOSFET is utilized in power supply, motor control, and renewable energy systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.9mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3930 pF @ 100 V |
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