SUP85N10-10P-GE3
MOSFET N-CH 100V 85A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP85N10-10P-GE3 is a N-Channel Power MOSFET from the TrenchFET® series. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 85A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 10mOhm maximum at 20A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 120 nC maximum at 10V and input capacitance (Ciss) of 4660 pF maximum at 50V. Power dissipation is rated at 3.75W (Ta) and 227W (Tc). The SUP85N10-10P-GE3 is housed in a TO-220AB package for through-hole mounting. Its robust performance makes it suitable for applications in power management, industrial automation, and automotive systems. Operating temperature range is -55°C to 150°C. The maximum gate-source voltage is ±20V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 227W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4660 pF @ 50 V |