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SUP85N04-03-E3

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SUP85N04-03-E3

MOSFET N-CH 40V 85A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SUP85N04-03-E3 is a TrenchFET® series N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 40V drain-source voltage and a continuous drain current capability of 85A at 25°C (Tc). The low on-resistance of 3.5mOhm is achieved at 30A and 10V Vgs, minimizing conduction losses. Optimized for switching performance, it exhibits a maximum gate charge of 250 nC at 10V Vgs and an input capacitance (Ciss) of 6860 pF at 25V Vds. With a maximum power dissipation of 250W (Tc), the TO-220AB package facilitates robust thermal management. This component is suitable for use in automotive, industrial, and power supply applications requiring high current handling and low on-state resistance. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C85A (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6860 pF @ 25 V

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