SUP85N04-03-E3
MOSFET N-CH 40V 85A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP85N04-03-E3 is a TrenchFET® series N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 40V drain-source voltage and a continuous drain current capability of 85A at 25°C (Tc). The low on-resistance of 3.5mOhm is achieved at 30A and 10V Vgs, minimizing conduction losses. Optimized for switching performance, it exhibits a maximum gate charge of 250 nC at 10V Vgs and an input capacitance (Ciss) of 6860 pF at 25V Vds. With a maximum power dissipation of 250W (Tc), the TO-220AB package facilitates robust thermal management. This component is suitable for use in automotive, industrial, and power supply applications requiring high current handling and low on-state resistance. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 250W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6860 pF @ 25 V |