SUP85N03-3M6P-GE3
MOSFET N-CH 30V 85A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP85N03-3M6P-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 85A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 3.6mOhm at 22A and 10V, with a gate source voltage (Vgs) range of 4.5V to 10V for optimal drive. Maximum gate charge (Qg) is 100 nC at 10V, and input capacitance (Ciss) is 3535 pF at 15V. Power dissipation is rated at 3.1W (Ta) and 78.1W (Tc). Mounting is via through-hole in a TO-220AB package. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in applications such as power management, industrial automation, and automotive systems requiring high efficiency power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 78.1W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3535 pF @ 15 V |