SUP85N03-04P-E3
MOSFET N-CH 30V 85A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SUP85N03-04P-E3 is an N-Channel MOSFET from the TrenchFET® series. This component features a 30V drain-to-source voltage (Vdss) and can handle a continuous drain current of 85A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 4.3mOhm at 30A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 90 nC (max) at 10V and an input capacitance (Ciss) of 4500 pF (max) at 25V. Maximum power dissipation is rated at 3.75W (Ta) and 166W (Tc). Operating temperature range is -55°C to 175°C (TJ). The MOSFET is housed in a TO-220AB package with through-hole mounting. This device is suitable for applications in power management and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 166W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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