SUP85N02-03-E3
MOSFET N-CH 20V 85A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SUP85N02-03-E3, an N-Channel TrenchFET® MOSFET, offers a 20V drain-source voltage and a continuous drain current of 85A at 25°C (Tc). This device features a low on-resistance of 3mOhm maximum at 30A and 4.5V Vgs, with a gate charge (Qg) of 200 nC at 4.5V. The input capacitance (Ciss) is a maximum of 21250 pF at 20V. Designed for through-hole mounting in a TO-220AB package, the SUP85N02-03-E3 can dissipate up to 250W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Typical applications include power management systems and load switching in industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 30A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 450mV @ 2mA (Min) |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 21250 pF @ 20 V |
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